PANJIT International Inc. PJQ2460_S1_00001 | 搜芯易Sourcengine

PANJIT International Inc. PJQ2460_S1_00001

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Power Field-Effect Transistor, 3.2A I(D), 60V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
S-PDSO-N6
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
SQUARE
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
DUAL
Additional Feature
ULTRA LOW RESISTANCE
Number of Elements
1
Number of Terminals
6
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
3.2
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
60
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Pulsed Drain Current-Max (IDM) (A)
12.8
Drain-source On Resistance-Max (ohm)
0.075
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED