PANJIT International Inc. PJMD600N65E1 | 搜芯易Sourcengine

PANJIT International Inc. PJMD600N65E1

生命周期状态
Active
RoHS
符合RoHS标准
说明
Power Field-Effect Transistor, 7.3A I(D), 650V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-252AA
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
54
Drain Current-Max (ID) (A)
7.3
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
650
Feedback Cap-Max (Crss) (pF)
9
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Avalanche Energy Rating (Eas) (mJ)
78
Pulsed Drain Current-Max (IDM) (A)
21.9
Drain-source On Resistance-Max (ohm)
0.6
Screening Level / Reference Standard
IEC-61249; MIL-STD-750