PANJIT International Inc. PJF60R620E_T0_00001 | 搜芯易Sourcengine

PANJIT International Inc. PJF60R620E_T0_00001

生命周期状态
NRFND
RoHS
符合RoHS标准
说明
MOSFET 600V N-Channel Super Junction MOSFET
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

Application
SWITCHING
JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-220AB
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
ISOLATED
Terminal Position
SINGLE
Additional Feature
LOW NOISE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
1.04
Drain Current-Max (ID) (A)
7
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
600
Feedback Cap-Max (Crss) (pF)
62
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Power Dissipation Ambient-Max (W)
1.04
Avalanche Energy Rating (Eas) (mJ)
85
Pulsed Drain Current-Max (IDM) (A)
14
Drain-source On Resistance-Max (ohm)
0.62
Screening Level / Reference Standard
IEC-61249; MIL-STD-750