PANJIT International Inc. PJF10NA65_T0_00001 | 搜芯易Sourcengine

PANJIT International Inc. PJF10NA65_T0_00001

生命周期状态
EOL
RoHS
符合RoHS标准
REACH
REACH compliant
说明
650V N-CHANNEL MOSFET
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-220AB
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
ISOLATED
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
10 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
650 V
Operating Temperature-Max
150 Cel
Operating Temperature-Min
-55 Cel
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
608 mJ
Drain-source On Resistance-Max
1 ohm
Pulsed Drain Current-Max (IDM)
40 A