PANJIT International Inc. PJD50P04_L2_00001 | 搜芯易Sourcengine

PANJIT International Inc. PJD50P04_L2_00001

生命周期状态
Active
RoHS
符合RoHS标准
说明
MOSFETs to252 n chan 40v
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-252AA
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
P-CHANNEL
Drain Current-Max (ID) (A)
9
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
40
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Pulsed Drain Current-Max (IDM) (A)
166
Drain-source On Resistance-Max (ohm)
0.012
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED