PANJIT International Inc. PJD1NA60A_L2_00001 | 搜芯易Sourcengine

PANJIT International Inc. PJD1NA60A_L2_00001

生命周期状态
EOL
RoHS
符合RoHS标准
说明
MOSFET 600V N-Channel MOSFET
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSSO-G2
Configuration
SINGLE
JEDEC-95 Code
TO-252AA
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
1 A
DS Breakdown Voltage-Min
600 V
Transistor Element Material
SILICON
Drain-source On Resistance-Max
7.9 ohm