Nexperia BV PHT6N06T/T3 | 搜芯易Sourcengine

Nexperia BV PHT6N06T/T3

生命周期状态
Discontinued
REACH
REACH compliant
说明
Power Field-Effect Transistor, 5.5A I(D), 55V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-G4
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
DUAL
Additional Feature
ESD PROTECTED
Number of Elements
1
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
5.5 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
55 V
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
15 mJ
Drain-source On Resistance-Max
0.15 ohm
Pulsed Drain Current-Max (IDM)
22 A