Nexperia BV PHT11N06LT,135 | 搜芯易Sourcengine

Nexperia BV PHT11N06LT,135

生命周期状态
Discontinued
RoHS
符合RoHS标准
REACH
REACH compliant
说明
N-channel TrenchMOS logic level FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-G4
Configuration
SINGLE WITH BUILT-IN DIODE
JESD-609 Code
e3
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
MATTE TIN
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
4.9 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
55 V
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
60 mJ
Drain-source On Resistance-Max
0.04 ohm
Pulsed Drain Current-Max (IDM)
19 A