Nexperia BV PHPT60606PY-QX | 搜芯易Sourcengine

Nexperia BV PHPT60606PY-QX

生命周期状态
Active
说明
60 V, 6 A PNP high power bipolar transistor
类别
Semiconductors Transistors Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSSO-G4
Configuration
SINGLE
JEDEC-95 Code
MO-235
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
VCEsat-Max (V)
0.525
Case Connection
COLLECTOR
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
PNP
DC Current Gain-Min (hFE)
120
Power Dissipation-Max (W)
25
Transistor Element Material
SILICON
Collector Current-Max (IC) (A)
6
Operating Temperature-Max (Cel)
175
Operating Temperature-Min (Cel)
-55
Collector-emitter Voltage-Max (V)
60
Collector-base Capacitance-Max (pF)
57
Transition Frequency-Nom (fT) (MHz)
110
Screening Level / Reference Standard
AEC-Q101; IEC-60134