PHK4NQ10T
PHILIPS SEMICONDUCTORS
- 生命周期状态Transferred
- RoHS符合RoHS标准
- 说明Power Field-Effect Transistor, 4A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- ConfigurationSINGLE
- Surface MountYES
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Number of Elements1
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)1.6
- Drain Current-Max (ID) (A)4
- Moisture Sensitivity Level2
- Peak Reflow Temperature (Cel)260
- Operating Temperature-Max (Cel)150
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