Nexperia BV PHD77NQ03T,118 | 搜芯易Sourcengine

Nexperia BV PHD77NQ03T,118

生命周期状态
Discontinued
RoHS
符合RoHS标准
说明
N-channel TrenchMOS standard level FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
SINGLE
Additional Feature
FAST SWITCHING
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
75
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
25
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Avalanche Energy Rating (Eas) (mJ)
100
Pulsed Drain Current-Max (IDM) (A)
240
Drain-source On Resistance-Max (ohm)
0.0171
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED