Nexperia BV PH3855L,115 | 搜芯易Sourcengine

Nexperia BV PH3855L,115

生命周期状态
Discontinued
RoHS
符合RoHS标准
说明
N-channel TrenchMOS logic level FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSSO-G4
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
MO-235
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
24
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
55
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Avalanche Energy Rating (Eas) (mJ)
40
Pulsed Drain Current-Max (IDM) (A)
45
Drain-source On Resistance-Max (ohm)
0.0045
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED