Nexperia BV PH20100S | 搜芯易Sourcengine

Nexperia BV PH20100S

生命周期状态
Discontinued
RoHS
符合RoHS标准
说明
Power Field-Effect Transistor, 34.3A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSSO-G4
Configuration
SINGLE WITH BUILT-IN DIODE
JESD-609 Code
e3
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
TIN
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
34.3 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
100 V
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
250 mJ
Peak Reflow Temperature (Cel)
260
Drain-source On Resistance-Max
0.023 ohm
Pulsed Drain Current-Max (IDM)
134 A
Time@Peak Reflow Temperature-Max (s)
30