PF38F5060M0Y0C0
Micron Technology
- 生命周期状态Discontinued
- RoHS符合RoHS标准
- REACHREACH compliant
- 说明Memory Circuit, Flash+PSRAM, 32MX16, CMOS, PBGA107
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.71
- SB Code8542.32.00.70
- Width8 mm
- Length11 mm
- TechnologyCMOS
- JESD-30 CodeR-PBGA-B107
- Memory Width16
- Organization32MX16
- Package CodeTFBGA
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, THIN PROFILE, FINE PITCH Meter
- Surface MountYES
- Terminal FormBALL
- Memory Density536870912 bit
- Memory IC TypeMEMORY CIRCUIT
- Operating ModeSYNCHRONOUS
- Terminal Pitch0.8 mm
- Access Time-Max96 ns
- Number of Words33554432 words
- Mixed Memory TypeFLASH+PSRAM
- Seated Height-Max1.2 mm
- Temperature GradeOTHER
- Terminal PositionBOTTOM
- Additional FeaturePSEUDO SRAM IS ORGANIZED AS 8M X 16
- Number of Functions1
- Number of Terminals107
- Standby Current-Max0.00016 Amp
- Number of Words Code32M
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Package Equivalence CodeBGA107,9X12,32
- Operating Temperature-Max85 Cel
- Operating Temperature-Min-30 Cel
- Supply Voltage-Max (Vsup)2 V
- Supply Voltage-Min (Vsup)1.7 V
- Supply Voltage-Nom (Vsup)1.8 V
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
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PF38F5060M0Y0C0