Nexperia BV PDTA115ET,215 | 搜芯易Sourcengine

Nexperia BV PDTA115ET,215

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
PNP resistor-equipped transistor; R1 = 100 kΩ, R2 = 100 kΩ
类别
Semiconductors Transistors Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PDSO-G3
Configuration
SINGLE WITH BUILT-IN RESISTOR
JEDEC-95 Code
TO-236AB
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
DLA Qualification
Not Qualified
Terminal Position
DUAL
Additional Feature
BUILT-IN BIAS RESISTOR RATIO IS 1
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
PNP
DC Current Gain-Min (hFE)
80
Transistor Element Material
SILICON
Collector Current-Max (IC) (A)
0.02
Operating Temperature-Max (Cel)
150
Collector-emitter Voltage-Max (V)
50