Nexperia BV PDTA114EU,135 | 搜芯易Sourcengine

Nexperia BV PDTA114EU,135

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
50 V, 100 mA PNP resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ
类别
Semiconductors Transistors Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PDSO-G3
Configuration
SINGLE WITH BUILT-IN RESISTOR
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
J-STD-609 Code
e3
VCEsat-Max (V)
0.15
Terminal Finish
TIN
Terminal Position
DUAL
Additional Feature
BUILT-IN BIAS RESISTOR RATIO IS 1
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
PNP
DC Current Gain-Min (hFE)
30
Power Dissipation-Max (W)
0.2
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
Peak Reflow Temperature (Cel)
260
Collector Current-Max (IC) (A)
0.1
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-65
Collector-emitter Voltage-Max (V)
50
Transition Frequency-Nom (fT) (MHz)
180
Screening Level / Reference Standard
IEC-60134
Time@Peak Reflow Temperature-Max (s)
30