PARADIGM TECHNOLOGY INC PDM4M6112S15M | 搜芯易Sourcengine

PARADIGM TECHNOLOGY INC PDM4M6112S15M

生命周期状态
Discontinued
说明
Cache SRAM Module, 512KX8, 8.5ns, CMOS, PDMA178
类别
Semiconductors Memory ICs SRAMs CACHE SRAM MODULE

ECCN
3A991.b.2.a
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

I/O Type
COMMON
Technology
CMOS
JESD-30 Code
R-PDMA-N178
Memory Width
8
Package Code
DIMM
Package Shape
RECTANGULAR
Package Style
MICROELECTRONIC ASSEMBLY Meter
Surface Mount
NO
Terminal Form
NO LEAD
Memory IC Type
CACHE SRAM MODULE
Operating Mode
SYNCHRONOUS
Parallel/Serial
PARALLEL
DLA Qualification
Not Qualified
Temperature Grade
COMMERCIAL
Terminal Position
DUAL
Additional Feature
CAN ALSO BE OPERATED WITH 5V SUPPLY
Memory Organization
512KX8
Number of Functions
1
Number of Terminals
178
Terminal Pitch (mm)
1.27
Access Time-Max (ns)
8.5
Number of Words Code
512K
Memory Density (bits)
4194304
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Supply Voltage-Max (V)
3.6
Supply Voltage-Min (V)
3
Supply Voltage-Nom (V)
3.3
Number of Words (words)
524288
Standby Current-Max (A)
0.06
Standby Voltage-Min (V)
3
Supply Current-Max (mA)
620
Package Equivalence Code
DIMM178
Operating Temperature-Max (Cel)
70
Operating Temperature-Min (Cel)
0