PDM4M096S25DI
PARADIGM TECHNOLOGY INC
- 生命周期状态Discontinued
- 说明SRAM Module, 512KX8, 25ns, CMOS, CDIP32
- 类别
- ECCN3A991.b.2.a
- ECCN GovernanceEAR
- HTS Code8542.32.00.41
- SB Code8542.32.00.40
- I/O TypeCOMMON
- TechnologyCMOS
- JESD-30 CodeR-GDIP-T32
- Memory Width8
- Package CodeDIP
- Output EnableYES
- Package ShapeRECTANGULAR
- Package StyleIN-LINE Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- J-STD-609 Codee0
- Memory IC TypeSRAM MODULE
- Operating ModeASYNCHRONOUS
- Number of Ports1
- Parallel/SerialPARALLEL
- Terminal FinishTIN LEAD
- DLA QualificationNot Qualified
- Temperature GradeINDUSTRIAL
- Terminal PositionDUAL
- Memory Organization512KX8
- Number of Functions1
- Number of Terminals32
- Terminal Pitch (mm)2.54
- Access Time-Max (ns)25
- Number of Words Code512K
- Memory Density (bits)4194304
- Package Body MaterialCERAMIC, GLASS-SEALED
- Output Characteristics3-STATE
- Supply Voltage-Max (V)5.25
- Supply Voltage-Min (V)4.75
- Supply Voltage-Nom (V)5
- Number of Words (words)524288
- Standby Current-Max (A)0.04
- Standby Voltage-Min (V)4.75
- Supply Current-Max (mA)380
- Package Equivalence CodeDIP32,.6
- Operating Temperature-Max (Cel)85
- Operating Temperature-Min (Cel)-40
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PDM4M096S25DI