Nexperia BV PBSS4160DS,115 | 搜芯易Sourcengine

Nexperia BV PBSS4160DS,115

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
60 V, 1 A NPN/NPN low VCEsat transistor
类别
Semiconductors Transistors Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PDSO-G6
Configuration
SEPARATE, 2 ELEMENTS
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
VCEsat-Max (V)
0.25
DLA Qualification
Not Qualified
Terminal Position
DUAL
Number of Elements
2
Number of Terminals
6
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
DC Current Gain-Min (hFE)
250
Power Dissipation-Max (W)
0.7
Transistor Element Material
SILICON
Collector Current-Max (IC) (A)
1
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-65
Collector-emitter Voltage-Max (V)
60
Collector-base Capacitance-Max (pF)
10
Transition Frequency-Nom (fT) (MHz)
220
Screening Level / Reference Standard
IEC-60134