Nexperia BV PBSS4140DPN-QF | 搜芯易Sourcengine

Nexperia BV PBSS4140DPN-QF

生命周期状态
Active
RoHS
符合RoHS标准
说明
40 V low VCEsat NPN/PNP transistor
类别
Semiconductors Transistors Small Signal Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PDSO-G6
Configuration
SEPARATE, 2 ELEMENTS
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
VCEsat-Max (V)
0.5
Terminal Position
DUAL
Number of Elements
2
Number of Terminals
6
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN AND PNP
DC Current Gain-Min (hFE)
200
Power Dissipation-Max (W)
0.6
Transistor Element Material
SILICON
Collector Current-Max (IC) (A)
1
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-65
Collector-emitter Voltage-Max (V)
40
Collector-base Capacitance-Max (pF)
10
Transition Frequency-Nom (fT) (MHz)
150
Screening Level / Reference Standard
AEC-Q101; IEC-60134