Nexperia BV PBSS4112PANP-QX | 搜芯易Sourcengine

Nexperia BV PBSS4112PANP-QX

生命周期状态
Active
RoHS
符合RoHS标准
说明
120 V, 1 A NPN/PNP low VCEsat (BISS) transistor
类别
Semiconductors Transistors Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
S-PDSO-N6
Configuration
SEPARATE, 2 ELEMENTS
Package Shape
SQUARE
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
NO LEAD
VCEsat-Max (V)
0.24
Case Connection
COLLECTOR
Terminal Position
DUAL
Number of Elements
2
Number of Terminals
6
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN AND PNP
DC Current Gain-Min (hFE)
30
Power Dissipation-Max (W)
1.45
Transistor Element Material
SILICON
Collector Current-Max (IC) (A)
1
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Collector-emitter Voltage-Max (V)
120
Collector-base Capacitance-Max (pF)
7
Transition Frequency-Nom (fT) (MHz)
120
Screening Level / Reference Standard
AEC-Q101; IEC-60134