Nexperia BV PBSS303ND-QX | 搜芯易Sourcengine

Nexperia BV PBSS303ND-QX

生命周期状态
Active
说明
60 V, 3 A NPN low VCEsat transistor
类别
Semiconductors Transistors Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PDSO-G6
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
6
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
DC Current Gain-Min (hFE)
20
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
115
Turn-off Time-Max (toff) (ns)
665
Collector Current-Max (IC) (A)
1
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-65
Collector-emitter Voltage-Max (V)
60
Transition Frequency-Nom (fT) (MHz)
140
Screening Level / Reference Standard
AEC-Q101; IEC-60134