Nexperia BV PBSS302PZ-QF | 搜芯易Sourcengine

Nexperia BV PBSS302PZ-QF

生命周期状态
Active
说明
20 V, 5.5 A PNP low VCEsat transistor
类别
Semiconductors Transistors Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PDSO-G4
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
VCEsat-Max (V)
0.32
Case Connection
COLLECTOR
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
PNP
DC Current Gain-Min (hFE)
100
Power Dissipation-Max (W)
2
Transistor Element Material
SILICON
Collector Current-Max (IC) (A)
5.5
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-65
Collector-emitter Voltage-Max (V)
20
Collector-base Capacitance-Max (pF)
160
Transition Frequency-Nom (fT) (MHz)
130
Screening Level / Reference Standard
AEC-Q101; IEC-60134