PANJIT International Inc. PBHV8110DA_R1_00001 | 搜芯易Sourcengine

PANJIT International Inc. PBHV8110DA_R1_00001

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Bipolar Transistors - BJT trans-ss npn hv sot23 500v
类别
Semiconductors Transistors Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.75
SB Code
8541.29.00.80

JESD-30 Code
R-PDSO-G3
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
VCEsat-Max (V)
0.45
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
DC Current Gain-Min (hFE)
40
Power Dissipation-Max (W)
1.25
Transistor Element Material
SILICON
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Collector Current-Max (IC) (A)
1
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Collector-emitter Voltage-Max (V)
100
Power Dissipation Ambient-Max (W)
1.25
Collector-base Capacitance-Max (pF)
10
Transition Frequency-Nom (fT) (MHz)
100
Screening Level / Reference Standard
IEC-61249; MIL-STD-750
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED