P35-1110-1
DAICO INDUSTRIES INC
- 生命周期状态Discontinued
- 说明RF Small Signal Field-Effect Transistor, 1-Element, Gallium Arsenide, N-Channel, Metal Semiconductor FET
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.21.00.95
- SB Code8541.21.00.80
- JESD-30 CodeO-XRDB-F4
- ConfigurationSINGLE
- Package ShapeROUND
- Package StyleDISK BUTTON Meter
- Surface MountYES
- Terminal FormFLAT
- FET TechnologyMETAL SEMICONDUCTOR
- Operating ModeDEPLETION MODE
- Case ConnectionSOURCE
- Terminal PositionRADIAL
- Number of Elements1
- Number of Terminals4
- Qualification StatusNot Qualified
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Transistor ApplicationAMPLIFIER
- Operating Temperature-Max175 Cel
- Transistor Element MaterialGALLIUM ARSENIDE
- Power Dissipation Ambient-Max0.35 W
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P35-1110-1