NIHON INTER ELECTRONICS CORP P2HM755HA | 搜芯易Sourcengine

NIHON INTER ELECTRONICS CORP P2HM755HA

生命周期状态
Transferred
说明
Power Field-Effect Transistor, 53A I(D), 500V, 0.065ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-XUFM-X8
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
ISOLATED
DLA Qualification
Not Qualified
Terminal Position
UPPER
Number of Elements
2
Number of Terminals
8
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
53
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
500
Operating Temperature-Max (Cel)
150
Pulsed Drain Current-Max (IDM) (A)
150
Drain-source On Resistance-Max (ohm)
0.065