- 生命周期状态Discontinued
- 说明Power Field-Effect Transistor, 8A I(D), 500V, 0.88ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeS-MSFM-P3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-257AA
- Package ShapeSQUARE
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormPIN/PEG
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionISOLATED
- Terminal PositionSINGLE
- Additional FeatureHIGH RELIABILITY
- Number of Elements1
- Number of Terminals3
- Qualification StatusNot Qualified
- Package Body MaterialMETAL
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)8 A
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min500 V
- Transistor Element MaterialSILICON
- Drain-source On Resistance-Max0.88 ohm
- Pulsed Drain Current-Max (IDM)32 A
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