INFINEON TECHNOLOGIES AG OM6232SSV | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG OM6232SSV

生命周期状态
Active-Unconfirmed
REACH
REACH compliant
说明
Power Field-Effect Transistor, 22A I(D), 500V, 0.27ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-MSFM-P6
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
JESD-609 Code
e0
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
PIN/PEG
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
ISOLATED
Terminal Finish
TIN LEAD
Terminal Position
SINGLE
Additional Feature
HIGH RELIABILITY
Number of Elements
2
Number of Terminals
6
Qualification Status
Not Qualified
Package Body Material
METAL
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
22 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
500 V
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
1000 mJ
Drain-source On Resistance-Max
0.27 ohm
Pulsed Drain Current-Max (IDM)
85 A