OM6010SMV
INFINEON TECHNOLOGIES AG
- 生命周期状态Discontinued
- REACHREACH compliant
- 说明Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeS-CQCC-N28
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeSQUARE
- Package StyleCHIP CARRIER Meter
- Surface MountYES
- Terminal FormNO LEAD
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- J-STD-609 Codee0
- Operating ModeENHANCEMENT MODE
- Case ConnectionISOLATED
- Terminal FinishTIN LEAD
- DLA QualificationNot Qualified
- Terminal PositionQUAD
- Additional FeatureHIGH RELIABILITY
- Number of Elements1
- Number of Terminals28
- Package Body MaterialCERAMIC, METAL-SEALED COFIRED
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID) (A)18
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)200
- Pulsed Drain Current-Max (IDM) (A)29
- Drain-source On Resistance-Max (ohm)0.18
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OM6010SMV