INFINEON TECHNOLOGIES AG OM11N55SAZT | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG OM11N55SAZT

生命周期状态
Active-Unconfirmed
REACH
REACH compliant
说明
Power Field-Effect Transistor, 11A I(D), 550V, 0.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-259AA
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
S-MSFM-P3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-259AA
JESD-609 Code
e0
Package Shape
SQUARE
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
PIN/PEG
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
ISOLATED
Terminal Finish
TIN LEAD
Terminal Position
SINGLE
Additional Feature
HIGH RELIABILITY
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
METAL
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
11 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
550 V
Transistor Element Material
SILICON
Drain-source On Resistance-Max
0.44 ohm
Pulsed Drain Current-Max (IDM)
52 A