ONSEMI NXH80B120H2Q0SGQ0BOOST | 搜芯易Sourcengine

ONSEMI NXH80B120H2Q0SGQ0BOOST

生命周期状态
Discontinued
REACH
REACH compliant
说明
Insulated Gate Bipolar Transistor, 41A I(C), 1200V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-XUFM-X22
Configuration
COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
VCEsat-Max (V)
2.5
Case Connection
ISOLATED
Terminal Position
UPPER
Number of Elements
2
Number of Terminals
22
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
103
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
47
Gate-emitter Voltage-Max (V)
20
Turn-off Time-Nom (toff) (ns)
299
Collector Current-Max (IC) (A)
41
Operating Temperature-Max (Cel)
125
Operating Temperature-Min (Cel)
-40
Gate-emitter Thr Voltage-Max (V)
6.4
Collector-emitter Voltage-Max (V)
1200