ONSEMI NXH80B120H2Q0SG | 搜芯易Sourcengine

ONSEMI NXH80B120H2Q0SG

生命周期状态
Discontinued
RoHS
符合RoHS标准
说明
Trans IGBT Module N-CH 1200V 41A 103W 20-Pin Case 180AJ Tray
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

VCEsat-Max
2.5 V
JESD-30 Code
R-XUFM-X22
Configuration
COMMON COLLECTOR, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
JESD-609 Code
e3
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
Case Connection
ISOLATED
Terminal Finish
Matte Tin (Sn) - annealed
Terminal Position
UPPER
Number of Elements
2
Number of Terminals
22
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Transistor Application
POWER CONTROL
Gate-emitter Voltage-Max
20 V
Operating Temperature-Max
125 Cel
Operating Temperature-Min
-40 Cel
Collector Current-Max (IC)
41 A
Power Dissipation-Max (Abs)
103 W
Transistor Element Material
SILICON
Gate-emitter Thr Voltage-Max
6.4 V
Collector-emitter Voltage-Max
1200 V