ONSEMI NXH600N65L4Q2F2PG | 搜芯易Sourcengine

ONSEMI NXH600N65L4Q2F2PG

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Insulated Gate Bipolar Transistor, 483A I(C), 650V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-XUFM-X41
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
J-STD-609 Code
e3
VCEsat-Max (V)
2.2
Case Connection
ISOLATED
Terminal Finish
Matte Tin (Sn) - annealed
Terminal Position
UPPER
Number of Elements
4
Number of Terminals
41
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
931
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
199.45
Gate-emitter Voltage-Max (V)
20
Turn-off Time-Nom (toff) (ns)
732.05
Collector Current-Max (IC) (A)
483
Operating Temperature-Max (Cel)
175
Operating Temperature-Min (Cel)
-40
Gate-emitter Thr Voltage-Max (V)
5.2
Collector-emitter Voltage-Max (V)
650