ONSEMI NXH600B100H4Q2F2SG | 搜芯易Sourcengine

ONSEMI NXH600B100H4Q2F2SG

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
MASS MARKET GEN3 Q2BOOST
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-XUFM-X44
Configuration
Three Level Inverter
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
VCEsat-Max (V)
2.3
Case Connection
ISOLATED
Terminal Position
UPPER
Number of Elements
6
Number of Terminals
44
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
511
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
126
Gate-emitter Voltage-Max (V)
20
Turn-off Time-Nom (toff) (ns)
451
Collector Current-Max (IC) (A)
192
Operating Temperature-Max (Cel)
175
Operating Temperature-Min (Cel)
-40
Gate-emitter Thr Voltage-Max (V)
6.6
Collector-emitter Voltage-Max (V)
1000