ONSEMI NXH50C120L2C2ES1G | 搜芯易Sourcengine

ONSEMI NXH50C120L2C2ES1G

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Transistor IGBT Module N-Channel 1200V 50A 26-Pin DIP Tube
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-PDIP-T26
Configuration
Three Phase Inverter with Brake
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
VCEsat-Max (V)
2.4
Case Connection
ISOLATED
Terminal Position
DUAL
Number of Elements
6
Number of Terminals
26
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
248
Gate-emitter Voltage-Max (V)
20
Turn-off Time-Nom (toff) (ns)
616
Collector Current-Max (IC) (A)
50
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-40
Gate-emitter Thr Voltage-Max (V)
6.8
Collector-emitter Voltage-Max (V)
1200