ONSEMI NXH350N100H4Q2F2PG | 搜芯易Sourcengine

ONSEMI NXH350N100H4Q2F2PG

生命周期状态
EOL
RoHS
符合RoHS标准
说明
IC MODULE PIM 350A 1000V
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

VCEsat-Max
1.8 V
JESD-30 Code
R-XUFM-X42
Configuration
Three Level Inverter
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
Case Connection
ISOLATED
Terminal Position
UPPER
Number of Elements
2
Number of Terminals
42
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Transistor Application
POWER CONTROL
Turn-on Time-Nom (ton)
114 ns
Gate-emitter Voltage-Max
20 V
Turn-off Time-Nom (toff)
572.5 ns
Operating Temperature-Max
125 Cel
Operating Temperature-Min
-40 Cel
Collector Current-Max (IC)
329 A
Power Dissipation-Max (Abs)
592 W
Transistor Element Material
SILICON
Gate-emitter Thr Voltage-Max
5.7 V
Collector-emitter Voltage-Max
1000 V