ONSEMI NXH300B100H4Q2F2SG | 搜芯易Sourcengine

ONSEMI NXH300B100H4Q2F2SG

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Trans IGBT Module N-CH 1000V 73A 194W Tray
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-XUFM-X59
Configuration
Dual, Common Source
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
VCEsat-Max (V)
2.25
Case Connection
ISOLATED
Terminal Position
UPPER
Number of Elements
6
Number of Terminals
59
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
194
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
110.42
Gate-emitter Voltage-Max (V)
20
Turn-off Time-Nom (toff) (ns)
326
Collector Current-Max (IC) (A)
73
Operating Temperature-Max (Cel)
175
Operating Temperature-Min (Cel)
-40
Gate-emitter Thr Voltage-Max (V)
5.9
Collector-emitter Voltage-Max (V)
1000