ONSEMI NXH200T120H3Q2F2STG | 搜芯易Sourcengine

ONSEMI NXH200T120H3Q2F2STG

生命周期状态
Active
REACH
REACH compliant
说明
ONSEMI - NXH200T120H3Q2F2STG - 80KW GEN-II Q2PACK-200A MODULE (PCM) / BTRAY
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-XUFM-X56
Configuration
Half Bridge
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
VCEsat-Max (V)
2.3
Case Connection
ISOLATED
Terminal Position
UPPER
Number of Elements
4
Number of Terminals
56
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
679
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
404
Gate-emitter Voltage-Max (V)
20
Turn-off Time-Nom (toff) (ns)
982
Collector Current-Max (IC) (A)
330
Operating Temperature-Max (Cel)
175
Operating Temperature-Min (Cel)
-40
Gate-emitter Thr Voltage-Max (V)
6.5
Collector-emitter Voltage-Max (V)
1200