ONSEMI NXH100B120H3Q0STG | 搜芯易Sourcengine

ONSEMI NXH100B120H3Q0STG

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
IGBT MODULE 1200V 50A 186W PIM22
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-XUFM-X22
Configuration
2 Independent
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
J-STD-609 Code
e3
VCEsat-Max (V)
2.3
Case Connection
ISOLATED
Terminal Finish
MATTE TIN
Terminal Position
UPPER
Additional Feature
RC-IGBT
Number of Elements
2
Number of Terminals
22
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
186
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
61
Gate-emitter Voltage-Max (V)
20
Turn-off Time-Nom (toff) (ns)
291
Collector Current-Max (IC) (A)
50
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-40
Gate-emitter Thr Voltage-Max (V)
6.5
Collector-emitter Voltage-Max (V)
1200