Nexperia BV NX5008NBKH | 搜芯易Sourcengine

Nexperia BV NX5008NBKH

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Power Field-Effect Transistor, 0.35A I(D), 50V, 3ohm, 1-Element, N-Channel, Silicon, Trench Mosfet FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
S-PDSO-N3
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
SQUARE
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
TRENCH MOSFET
J-STD-609 Code
e4
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
NICKEL PALLADIUM GOLD
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
2.8
Drain Current-Max (ID) (A)
0.35
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
50
Feedback Cap-Max (Crss) (pF)
1.9
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Pulsed Drain Current-Max (IDM) (A)
1
Drain-source On Resistance-Max (ohm)
3
Screening Level / Reference Standard
IEC-60134
Time@Peak Reflow Temperature-Max (s)
30