ONSEMI NVTYS007N06CTWG | 搜芯易Sourcengine

ONSEMI NVTYS007N06CTWG

生命周期状态
Active-Unconfirmed
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Power Field-Effect Transistor, 16A I(D), 60V, 0.0068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-X5
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
UNSPECIFIED
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
5
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
63
Drain Current-Max (ID) (A)
16
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
60
Feedback Cap-Max (Crss) (pF)
15
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Operating Temperature-Max (Cel)
175
Operating Temperature-Min (Cel)
-55
Avalanche Energy Rating (Eas) (mJ)
166
Pulsed Drain Current-Max (IDM) (A)
440
Drain-source On Resistance-Max (ohm)
0.0068
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED