ONSEMI NVTFS5820NLT1G | 搜芯易Sourcengine

ONSEMI NVTFS5820NLT1G

生命周期状态
Contact Mfr
RoHS
符合RoHS标准
说明
Trans MOSFET N-CH 60V 11A Automotive AEC-Q101 8-Pin WDFN EP T/R
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
S-PDSO-F8
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
SQUARE
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
DLA Qualification
Not Qualified
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
8
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
11
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
60
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Operating Temperature-Max (Cel)
175
Avalanche Energy Rating (Eas) (mJ)
48
Pulsed Drain Current-Max (IDM) (A)
247
Drain-source On Resistance-Max (ohm)
0.015
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED