ONSEMI NVMJD012N06CLTWG | 搜芯易Sourcengine

ONSEMI NVMJD012N06CLTWG

生命周期状态
NRFND
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Trans MOSFET N-CH 60V 11.5A 8-Pin LFPAK EP T/R Automotive AEC-Q101
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSSO-G4
Configuration
2 N-Channel (Dual)
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e3
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
Matte Tin (Sn) - annealed
Terminal Position
SINGLE
Number of Elements
2
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
42
Drain Current-Max (ID) (A)
42
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
60
Feedback Cap-Max (Crss) (pF)
8
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
175
Operating Temperature-Min (Cel)
-55
Avalanche Energy Rating (Eas) (mJ)
105
Pulsed Drain Current-Max (IDM) (A)
153
Drain-source On Resistance-Max (ohm)
0.0168
Screening Level / Reference Standard
AEC-Q101
Time@Peak Reflow Temperature-Max (s)
30