ONSEMI NVMFS5C680NLWFT1G | 搜芯易Sourcengine

ONSEMI NVMFS5C680NLWFT1G

生命周期状态
Active
RoHS
符合RoHS标准
说明
Trans MOSFET N-CH 60V 8.1A Automotive 5-Pin SO-FL EP T/R
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-F5
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e3
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
Matte Tin (Sn) - annealed
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
5
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
3.4
Drain Current-Max (ID) (A)
8.1
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
60
Feedback Cap-Max (Crss) (pF)
5
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
175
Operating Temperature-Min (Cel)
-55
Avalanche Energy Rating (Eas) (mJ)
44.6
Pulsed Drain Current-Max (IDM) (A)
87
Drain-source On Resistance-Max (ohm)
0.043
Screening Level / Reference Standard
AEC-Q101
Time@Peak Reflow Temperature-Max (s)
30