ONSEMI NVD6824NLT4G | 搜芯易Sourcengine

ONSEMI NVD6824NLT4G

生命周期状态
EOL
RoHS
符合RoHS标准
说明
ONSEMI - NVD6824NLT4G - Power MOSFET, N Channel, 100 V, 41 A, 0.0165 ohm, TO-252 (DPAK), Surface Mount
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e3
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
Matte Tin (Sn) - annealed
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
90
Drain Current-Max (ID) (A)
41
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
100
Feedback Cap-Max (Crss) (pF)
133
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
175
Operating Temperature-Min (Cel)
-55
Avalanche Energy Rating (Eas) (mJ)
80
Pulsed Drain Current-Max (IDM) (A)
238
Drain-source On Resistance-Max (ohm)
0.023
Screening Level / Reference Standard
AEC-Q101
Time@Peak Reflow Temperature-Max (s)
30