NVATS5A113PLZT4G
ONSEMI
- 生命周期状态EOL
- RoHS符合RoHS标准
- 说明MOSFET P-CHANNEL 60V 38A ATPAK
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-PSSO-G2
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- J-STD-609 Codee6
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal FinishTIN BISMUTH
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals2
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeP-CHANNEL
- Drain Current-Max (ID) (A)38
- Moisture Sensitivity Level1
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)60
- Peak Reflow Temperature (Cel)260
- Avalanche Energy Rating (Eas) (mJ)95
- Pulsed Drain Current-Max (IDM) (A)114
- Drain-source On Resistance-Max (ohm)0.0295
- Screening Level / Reference StandardAEC-Q101
- Time@Peak Reflow Temperature-Max (s)30
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NVATS5A113PLZT4G