产品制造商
提交询价BOM 工具

NV25010MUW3VLT3G

ONSEMI

ONSEMI NV25010MUW3VLT3G
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • HTS Code
    8542.32.00.51
  • SB Code
    8542.32.00.50
  • Technology
    CMOS
  • Width (mm)
    2
  • Length (mm)
    3
  • JESD-30 Code
    R-PDSO-N8
  • Memory Width
    8
  • Package Code
    HUSSON
  • Package Shape
    RECTANGULAR
  • Package Style
    SMALL OUTLINE, HEAT SINK/SLUG, ULTRA THIN PROFILE, SHRINK PITCH Meter
  • Surface Mount
    YES
  • Terminal Form
    NO LEAD
  • Memory IC Type
    EEPROM
  • Operating Mode
    SYNCHRONOUS
  • Parallel/Serial
    SERIAL
  • Serial Bus Type
    SPI
  • Write Protection
    HARDWARE/SOFTWARE
  • Temperature Grade
    AUTOMOTIVE
  • Terminal Position
    DUAL
  • Memory Organization
    128X8
  • Number of Functions
    1
  • Number of Terminals
    8
  • Terminal Pitch (mm)
    0.5
  • Number of Words Code
    128
  • Memory Density (bits)
    1024
  • Package Body Material
    PLASTIC/EPOXY
  • Output Characteristics
    3-STATE
  • Seated Height-Max (mm)
    0.55
  • Supply Voltage-Max (V)
    5.5
  • Supply Voltage-Min (V)
    1.7
  • Supply Voltage-Nom (V)
    5
  • Data Retention Time-Min
    200
  • Number of Words (words)
    128
  • Programming Voltage (V)
    5
  • Standby Current-Max (A)
    3.0E-6
  • Supply Current-Max (mA)
    3
  • Package Equivalence Code
    SOLCC8,.11,20
  • Clock Frequency-Max (MHz)
    20
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Endurance (Write/Erase Cycles)
    4000000
  • Operating Temperature-Max (Cel)
    125
  • Operating Temperature-Min (Cel)
    -40
  • Write Cycle Time-Max (tWC) (ms)
    4
  • Screening Level / Reference Standard
    AEC-Q100
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED

NV25010MUW3VLT3G有0家供应商货源可供购买或竞价

提交询价

您的询价单将直接发送给我们的销售专家: Pari

提交询价
NV25010MUW3VLT3G
提交询价
NV25010MUW3VLT3G