ONSEMI NTQD4154ZR2G | 搜芯易Sourcengine

ONSEMI NTQD4154ZR2G

生命周期状态
Active
RoHS
符合RoHS标准
说明
N-CHANNEL POWER MOSFET
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PDSO-G8
Configuration
COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e3
Operating Mode
ENHANCEMENT MODE
Terminal Finish
TIN
DLA Qualification
Not Qualified
Terminal Position
DUAL
Number of Elements
2
Number of Terminals
8
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
7.5
Moisture Sensitivity Level
3
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
20
Peak Reflow Temperature (Cel)
260
Pulsed Drain Current-Max (IDM) (A)
30
Drain-source On Resistance-Max (ohm)
0.019