NTP65N02R
ONSEMI
- 生命周期状态EOL
- 说明MOSFET N-CH 25V 7.6A/58A TO220AB
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.95
- SB Code8541.29.00.80
- ApplicationSWITCHING
- JESD-30 CodeR-PSFM-T3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-220AB
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- J-STD-609 Codee0
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal FinishTin/Lead (Sn/Pb)
- DLA QualificationNot Qualified
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)78
- Drain Current-Max (ID) (A)7.6
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)25
- Peak Reflow Temperature (Cel)235
- Operating Temperature-Max (Cel)150
- Avalanche Energy Rating (Eas) (mJ)60
- Pulsed Drain Current-Max (IDM) (A)160
- Drain-source On Resistance-Max (ohm)0.0105
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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NTP65N02R