ONSEMI NTMKB4893NT1G | 搜芯易Sourcengine

ONSEMI NTMKB4893NT1G

生命周期状态
Discontinued
RoHS
符合RoHS标准
说明
Power Field-Effect Transistor, 15.8A I(D), 25V, 0.0054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-XBCC-N2
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
CHIP CARRIER Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
DLA Qualification
Not Qualified
Terminal Position
BOTTOM
Number of Elements
1
Number of Terminals
2
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
15.8
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
25
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Avalanche Energy Rating (Eas) (mJ)
79.4
Pulsed Drain Current-Max (IDM) (A)
124
Drain-source On Resistance-Max (ohm)
0.0054
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED